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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFZ34N is an N-channel HEXFET Power MOSFET designed for efficiency and reliability in a wide range of applications. It features a breakdown voltage of 55V and a continuous current rating of 29A, with a low on-state resistance (RDS(on)) of 40mΩ.
This MOSFET is housed in the universally preferred TO-220AB package, making it suitable for commercial and industrial applications with power dissipation levels up to approximately 50 watts. Its fast switching speed and ruggedized design contribute to its efficiency.
Key electrical characteristics include an input capacitance of 700pF, a threshold voltage of 4V, and rise and fall times of 49ns and 40ns, respectively. The operating temperature range is from -55°C to 175°C.
The IRFZ34N is an efficient device for power management tasks, offering a balance of performance and thermal characteristics for demanding electronic designs.
The breakdown voltage of the IRFZ34N is 55V.
The IRFZ34N has a maximum continuous current rating of 29A.
The maximum on-state resistance for the IRFZ34N is 40mΩ.
The IRFZ34N is available in the TO-220AB package.
The IRFZ34N operates between -55°C and 175°C.