SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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The Infineon Technologies IRFZ34N is an N-Channel MOSFET belonging to the power MOSFET family. It is designed for various electronic applications requiring efficient switching and power handling capabilities.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 30A at a case temperature of 25°C. The static drain-source on-resistance (Rds(on)) is specified at a maximum of 0.077 Ohm when VGS is 10V and ID is 15A. The gate threshold voltage (Vgs(th)) is typically 4V at a drain current of 250µA.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TO-220 package, suitable for through-hole mounting. The maximum power dissipation (Pd) is 150W at a case temperature of 25°C.
Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1. This component is suitable for designs requiring robust power switching and control.
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| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRFZ34N is 55V.
The continuous drain current (Id) for the IRFZ34N is 30A at a case temperature of 25°C.
The static drain-source on-resistance (Rds(on)) is a maximum of 0.077 Ohm when VGS is 10V and ID is 15A.
The operating temperature range for the IRFZ34N is from -55°C to 175°C.
The IRFZ34N is supplied in a TO-220 package.
The IRFZ34N is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the IRFZ34N is 1 Unlimited.
