| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ34 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 30 A at case temperature. The device has a maximum drain-source on-resistance (Rds(on)) of 50 mΩ at 18 A and 10 V gate drive, enabling efficient power switching.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4 V at 250 µA, a maximum gate charge (Qg) of 46 nC at 10 V, and an input capacitance (Ciss) of 1200 pF at 25 V. The maximum power dissipation is 88 W at case temperature, and the operating junction temperature range is -55°C to 175°C.
The MOSFET is housed in a TO-220-3 through-hole package (supplier device package TO-220AB), suitable for manual or wave soldering assembly. It is designed for general-purpose switching and amplification applications in power management circuits.
60 V.
30 A at case temperature.
50 mΩ at 18 A and 10 V gate drive.
-55°C to 175°C junction temperature.
TO-220-3 (TO-220AB) through-hole package.
RoHS3 Compliant (unverified).
4 V at 250 µA drain current.