| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,900 pcs
|
14900 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ24SPBF is an N-Channel Power MOSFET from Vishay Siliconix designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 60V and continuous drain current of 17A at Tc=25°C, this MOSFET offers a maximum drain-source on-resistance of 100 mOhm at Vgs=10V and Id=10A.
This device features a maximum gate threshold voltage of 4V at Id=250µA, total gate charge of 25 nC at Vgs=10V, and input capacitance of 640 pF at Vds=25V. It is rated for an operating junction temperature range of -55°C to 175°C and can dissipate up to 60W at Tc=25°C.
The IRFZ24SPBF comes in a TO-263-3 (D2Pak) surface mount package with low internal connection resistance, making it suitable for high-current applications. It is offered as a lead (Pb)-free RoHS-compliant part.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.42 | $3.42 |
| 10+ | $2.23 | $2.23 |
| 50+ | $1.71 | $1.71 |
| 100+ | $1.54 | $1.54 |
| 500+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60 V.
The continuous drain current is 17 A at Tc=25°C and 12 A at Tc=100°C.
The maximum drain-source on-resistance is 100 mOhm at Id=10A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.