| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,020 pcs
|
51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ24NPBF is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 17A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 70mOhm at Vgs = 10V and Id = 10A, making it suitable for efficient switching applications.
This MOSFET uses standard gate drive voltage of 10V with a maximum gate threshold voltage (Vgs(th)) of 4V at Id = 250µA. The input capacitance (Ciss) is 370pF at Vds = 25V, and the total gate charge (Qg) is 20nC at Vgs = 10V, enabling fast switching performance. The maximum power dissipation is 45W at case temperature.
The device is housed in a TO-220AB package with through-hole mounting, providing good thermal performance and mechanical robustness for power applications. The operating junction temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.11 | $1.11 |
| 10+ | $0.70 | $0.70 |
| 50+ | $0.51 | $0.51 |
| 100+ | $0.46 | $0.46 |
| 500+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 55V.
The maximum continuous drain current (Id) is 17A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 70mOhm at Vgs = 10V and Id = 10A.
The IRFZ24NPBF is available in a TO-220AB package with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.
The maximum power dissipation (Pd) is 45W at case temperature (Tc).