| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ24 is an N-Channel enhancement-mode MOSFET manufactured using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications requiring a 60V drain-source breakdown voltage and 17A continuous drain current capability.
Key electrical specifications include a maximum on-resistance of 100mOhm at 10V gate drive and 10A drain current. The device features a typical gate threshold voltage of 4V and maximum total gate charge of 25 nC, enabling efficient switching at moderate frequencies.
The IRFZ24 is packaged in a standard TO-220-3 through-hole package (supplier device package TO-220AB) suitable for PCB mounting with heatsink attachment. It is rated for operation over a junction temperature range of -55°C to 175°C with a maximum power dissipation of 60W at Tc.
The maximum drain-source voltage (Vdss) is 60 V.
The continuous drain current (Id) at case temperature Tc is 17 A.
The IRFZ24 is housed in a TO-220-3 through-hole package (supplier device package TO-220AB).
The operating junction temperature range is -55°C to 175°C.
The maximum on-resistance is 100 mOhm at Id=10A and Vgs=10V.
The maximum gate threshold voltage is 4V at Id=250µA.
RoHS compliance is unverified but listed as RoHS3 Compliant.