| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ20 is an N-Channel enhancement-mode MOSFET designed for power switching applications. It features a drain-to-source voltage rating of 50V and a continuous drain current rating of 15A at case temperature Tc. The maximum on-resistance is 100mΩ at a gate-to-source voltage of 10V and drain current of 10A, enabling efficient conduction in low-voltage switching circuits.
The device offers a maximum gate charge of 17nC and input capacitance of 850pF, making it suitable for moderate-speed switching applications. The maximum power dissipation is 40W at Tc, and the operating junction temperature range is -55°C to 150°C.
This MOSFET is supplied in a TO-220-3 package with through-hole mounting, providing good thermal performance and ease of assembly. The device is designed for use in power supplies, DC-DC converters, motor control, and other power management circuits.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V
15 A (Tc)
100 mΩ at Vgs = 10 V, Id = 10 A
TO-220-3 (through hole)
-55°C to 150°C (junction)
4 V at Id = 250 µA
RoHS3 compliant (unverified)