| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | 0619 | On Request | On Request |
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| Manufacturer Name |
The Infineon Technologies IRFZ14 is a third-generation N-Channel Power MOSFET. It offers a combination of fast switching, rugged design, and low on-resistance, making it cost-effective for commercial and industrial applications.
Key electrical specifications include a 60V drain-source breakdown voltage (VDS) and a gate-source breakdown voltage of ±20V (VGS). The on-resistance (RDS(on)) is 0.20 Ohms at a gate-source voltage of 10V. It can handle a continuous drain current of 10A at 25°C and 7.2A at 100°C, with a pulsed drain current rating of 40A. The maximum power dissipation is 40W at 25°C.
This MOSFET features a gate charge (Qg) of 11nC, with typical gate-source charge (Qgs) of 3.1nC and gate-drain charge (Qgd) of 5.8nC. It also has a single pulse avalanche energy (EAS) of 47mJ and a peak diode recovery dV/dt of 4.5V/ns.
The IRFZ14 is housed in a TO-220AB package, which is widely used for power dissipation levels up to approximately 50W due to its low thermal resistance and cost-effectiveness. The operating junction and storage temperature range is from -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
10 A at VGS=10V and TC=25°C, derated to 7.2 A at TC=100°C.
0.20 Ω typical at VGS=10V.
11 nC maximum.
-55 to +175°C.
TO-220AB.
Through Hole.