| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42 pcs
|
42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ10 is an N-Channel power MOSFET manufactured by Vishay Siliconix. It is designed for switching and amplification applications requiring up to 60V drain-source voltage and 10A continuous drain current (at 25°C case temperature). The device features a maximum on-resistance of 200mΩ at 10V gate drive, ensuring efficient power handling.
Key electrical characteristics include a gate threshold voltage range of 2V to 4V, typical gate charge of 11nC, and input capacitance of 300pF. The MOSFET can handle pulsed drain currents up to 40A and has a single pulse avalanche energy rating of 47mJ. Operating junction temperature range is -55°C to 175°C.
The IRFZ10 is offered in the industry-standard TO-220AB through-hole package, which provides low thermal resistance (3.5°C/W junction-to-case) for effective heat dissipation. It is suitable for power supplies, motor controls, and other general-purpose switching applications.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.39 | $1.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
10A.
200mΩ maximum at 10V gate drive and 6A drain current.
-55°C to 175°C junction temperature.
TO-220-3 (TO-220AB).
The datasheet indicates RoHS3 compliance, but this is unverified.
2V to 4V at 250µA drain current.