| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
112 pcs
|
112 pcs | On Request | 1 | On Request | On Request | 16+98+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Package / Case |
The Infineon IRFY9140CM is a high-reliability P-channel HEXFET Power MOSFET. It is designed with simple drive requirements and offers electrically isolated, hermetically sealed packaging suitable for space-level applications.
Key electrical specifications include a Drain-Source Breakdown Voltage (BVDSS) of -100V, a maximum Continuous Drain Current (ID) of -15.8A, and a maximum On-Resistance (RDS(on)) of 0.20 Ohms. The device also has a maximum Gate Charge (QG) of 60nC and an ESD Rating of Class 2 per MIL-STD-750.
This MOSFET is well-suited for applications such as DC-DC converters and motor drives. Its HEXFET technology provides efficient geometry for low on-state resistance and high transconductance, along with the advantages of MOSFETs like voltage control and fast switching. The isolated package improves thermal efficiency and reduces drain capacitance.
The IRFY9140CM is housed in a TO-257AA through-hole package, eliminating the need for additional isolating material between the device and a heatsink.
The maximum drain-source breakdown voltage (BVDSS) is -100V.
The maximum continuous drain current (ID) is -15.8A.
The maximum on-resistance (RDS(on)) is 0.20Ω.
The maximum gate charge (QG) is 60nC.
The ESD rating is Class 2 per MIL-STD-750, Method 1020.
The IRFY9140CM is housed in a TO-257AA package with through-hole mounting.