| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 | |
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | 320 | On Request | On Request |
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The IRFY9130 from Vishay Dale is a P-Channel Power MOSFET suitable for high-reliability applications. It is housed in a hermetically sealed TO-220M metal package, offering simple drive requirements and a lightweight design.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of -100V and a continuous drain current (ID) of -9.3A at 25°C. The static drain-source on-state resistance (RDS(on)) is typically 0.31Ω at 10V gate-source voltage and -9.3A drain current. The device operates over a temperature range of -55°C to 150°C.
With a power dissipation of 45W at 25°C case temperature, the IRFY9130 is designed for robust performance. Its thermal resistance junction to case is a maximum of 2.8°C/W, and junction to ambient is 80°C/W.
This MOSFET is ideal for applications requiring a reliable P-channel device in a metal package. The TO-220M package is through-hole mounted.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) for the IRFY9130 is -100V.
The continuous drain current (ID) for the IRFY9130 is -9.3A at a case temperature of 25°C.
The typical on-state resistance (RDS(on)) for the IRFY9130 is 0.31Ω when VGS is 10V and ID is -9.3A.
The operating and storage temperature range for the IRFY9130 is -55°C to 150°C.
The IRFY9130 is supplied in a TO-220M metal package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.