IRFW644BTM N-Channel Power MOSFET from On Semiconductor. Features a 250V maximum drain-source voltage, 14A continuous drain current, and 280mOhm on-resistance at 10V gate drive.
Mfr Part #:

IRFW644BTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor. Features a 250V maximum drain-source voltage, 14A continuous drain current, and 280mOhm on-resistance at 10V gate drive.
Total Stock: 164,364 pcs
$ Price Range: $0.55

IRFW644BTM Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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164,364 pcs
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IRFW644BTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Power Dissipation (Maximum @ Tc)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFW644BTM Description

Short technical summary and product information.

The IRFW644BTM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for high-efficiency power switching applications. Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 250 V, a continuous drain current (Id) of 14 A at case temperature (Tc), and a maximum on-resistance (Rds(on)) of 280 mOhm at 7 A drain current and 10 V gate drive. The gate threshold voltage (Vgs(th)) is 4 V maximum at 250 µA. The device features a maximum input capacitance (Ciss) of 1600 pF at 25 V Vds and a maximum gate charge (Qg) of 60 nC at 10 V Vgs, making it suitable for medium-frequency switching. Power dissipation is rated at 3.13 W at ambient temperature (Ta) and 139 W at case temperature (Tc). The operating junction temperature range is -55°C to 150°C. The IRFW644BTM is offered in a surface mount D2PAK (TO-263) package, which is compliant with RoHS3 requirements.

IRFW644BTM Quick Information

Product Type: Power MOSFET
Canonical Name: IRFW644BTM N-Channel Power MOSFET
Subcategory: N-Channel

IRFW644BTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFW644BTM Estimated Pricing

Qty Low High
550+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFW644BTM Features

  • N-Channel enhancement mode power MOSFET.
  • Rated for 250V drain-source voltage.
  • 14A continuous drain current capability.
  • 280mOhm max on-resistance at 10V Vgs.
  • Surface mount D2PAK (TO-263) package.

IRFW644BTM Applications

  • High-efficiency DC-DC converter power stages.
  • Motor control and power management circuits.
  • Switching power supplies and inverters.
  • Automotive and industrial power applications.

IRFW644BTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss)?

250 V.

What is the continuous drain current rating?

14 A at case temperature (Tc).

What is the maximum on-resistance?

280 mOhm at 7 A drain current and 10 V gate drive.

What is the gate threshold voltage?

4 V maximum at 250 µA drain current.

What is the package type?

Surface mount D2PAK (TO-263).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the device RoHS compliant?

RoHS3 compliant (unverified).

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