IRFUC20 IRFUC20 is a 600V, 2A N-Channel power MOSFET from Vishay Siliconix. It features a low on-resistance of 4.4 Ohm and is housed in a through-hole TO-251AA package.
Mfr Part #:

IRFUC20

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFUC20 is a 600V, 2A N-Channel power MOSFET from Vishay Siliconix. It features a low on-resistance of 4.4 Ohm and is housed in a through-hole TO-251AA package.
✓ Total Stock: 61 pcs
$ Price Range: $2.38

IRFUC20 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
61 pcs
61 pcs On Request 1 On Request On Request 9407 On Request On Request

IRFUC20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFUC20 Description

Short technical summary and product information.

The IRFUC20 is an N-Channel power MOSFET from Vishay Siliconix, part of the third-generation Power MOSFET family. It is designed for fast switching and ruggedized performance. Key electrical specifications include a maximum drain-source voltage of 600V, continuous drain current of 2A at 25°C case temperature, and a maximum on-resistance of 4.4 Ohm at Vgs=10V and Id=1.2A.

 

The device offers a maximum gate charge of 18 nC at Vgs=10V, with typical gate-source charge of 3 nC and gate-drain charge of 8.9 nC. Input capacitance is 350 pF at Vds=25V. The MOSFET can handle pulsed drain currents up to 8A and has a single pulse avalanche energy rating of 74 mJ. Maximum power dissipation is 42W at Tc=25°C and 2.5W at Ta=25°C (PCB mount).

 

The IRFUC20 is housed in a TO-251AA package (IPAK) with straight leads for through-hole mounting. It is available in lead-free (PbF) and halogen-free versions. The device is suitable for applications requiring high voltage switching, such as power supplies, converters, and motor control circuits.

IRFUC20 Quick Information

Product Type: Power MOSFET
Canonical Name: IRFUC20 N-Channel Power MOSFET 600V 2A TO-251AA
Subcategory: N-Channel Power MOSFET

IRFUC20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRFUC20 Estimated Pricing

Qty Low High
3,000+ $2.38 $2.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFUC20 Features

  • 600V drain-source voltage rating.
  • 2A continuous drain current at 25°C.
  • Low on-resistance of 4.4 Ohm.
  • Fast switching with 18 nC gate charge.
  • Through-hole TO-251AA package.

IRFUC20 Applications

  • High voltage power supply circuits.
  • DC-DC converter and inverter designs.
  • Motor control and drive applications.
  • Switching regulators and power management.

IRFUC20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFUC20?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current is 2A at Tc=25°C and 1.3A at Tc=100°C.

What is the on-resistance of the IRFUC20?

The maximum on-resistance is 4.4 Ohm at Vgs=10V and Id=1.2A.

What package does the IRFUC20 come in?

The IRFUC20 is available in a TO-251AA (IPAK) through-hole package with straight leads.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRFUC20 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but is unverified. There is a source conflict with DigiKey listing it as non-compliant.

What is the gate charge of the IRFUC20?

The maximum gate charge is 18 nC at Vgs=10V.

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