| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
618 pcs
|
618 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFU9210 is a P-Channel Power MOSFET from Vishay Siliconix. It features a drain-source voltage of -200V, continuous drain current of -1.9A at 25°C, and a maximum on-resistance of 3Ω at Vgs=-10V and Id=-1.1A.
The device offers fast switching, repetitive avalanche rating, and dynamic dV/dt rating. Gate charge is 8.9nC at Vgs=-10V, with input capacitance of 170pF at Vds=-25V. Power dissipation is 25W at case temperature 25°C.
The MOSFET is available in a through-hole TO-251AA (IPak) package with straight leads. It is suitable for through-hole mounting applications. The device is lead (Pb)-free and halogen-free according to the datasheet ordering information.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $1.60 | $1.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFU9210 comes in a TO-251AA (IPak) through-hole package with straight leads.
-55°C to 150°C (junction temperature).
The datasheet indicates lead (Pb)-free and halogen-free versions are available, but RoHS compliance is unverified. The existing database lists RoHS3 compliant with low confidence.
-200V maximum.
-1.9A at Tc=25°C, -1.2A at Tc=100°C.
3Ω maximum at Vgs=-10V and Id=-1.1A.
8.9nC maximum at Vgs=-10V.