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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU9014 is a P-Channel enhancement-mode MOSFET from Vishay Siliconix, designed for medium-power switching applications. It features a maximum drain-source voltage of -60V and a continuous drain current of -5.1A at 25°C case temperature, derated to -3.2A at 100°C. The on-resistance is typically 500mOhm maximum at 10V gate drive and 3.1A drain current, enabling efficient power handling.
This MOSFET offers fast switching with a gate charge of 12nC at 10V, and input capacitance of 270pF at 25V drain-source. It is avalanche rated with a single pulse avalanche energy of 140mJ and repetitive avalanche energy of 2.5mJ, making it suitable for rugged environments. The device also supports dynamic dV/dt rating for enhanced reliability.
Packaged in a TO-251AA (IPAK) through-hole package with straight leads, it is designed for traditional PCB mounting. The maximum power dissipation is 25W at case temperature 25°C, and 2.5W at ambient with PCB mount. The junction temperature range is -55°C to 150°C.
RoHS3 compliance is indicated but unverified. This part is also available as surface-mount variants (IRFR9014, SiHFR9014) in DPAK package.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $1.31 | $1.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The junction temperature range is -55°C to 150°C.
It is available in the TO-251AA (IPAK) through-hole package with straight leads.
It is listed as RoHS3 compliant, but this is unverified and should be treated as low confidence.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The continuous drain current is -5.1A at 25°C case temperature, derated to -3.2A at 100°C.
Maximum power dissipation is 25W at case temperature 25°C, and 2.5W at ambient with PCB mount.
The maximum on-resistance is 500mOhm at 10V gate drive and 3.1A drain current.