| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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525 pcs
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525 pcs | On Request | 1 | On Request | On Request | 535 | On Request | On Request |
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| Manufacturer Name |
The Infineon Technologies IRFU9010PBF is a P-Channel MOSFET designed for efficient power management applications. It features a drain-source breakdown voltage of 55V and a continuous drain current of 30A (Tc), with a power dissipation of 120W (Tc).
This MOSFET utilizes Trench technology for enhanced performance. It has a gate-source threshold voltage of 3V and a low drain-source on-resistance of 14 mOhms at 30A and 10V. The input capacitance is 1870pF at 25V, with a gate charge of 92nC.
The device is packaged in a D-Pak (TO-252-3) surface-mount package, suitable for automated assembly processes. It operates within a maximum temperature of 175°C.
Key electrical characteristics include a 51ns rise time and a 100ns fall time. The IRFU9010PBF is suitable for various applications requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The continuous drain current is 30A (Tc).
The power dissipation is 120W (Tc).
The gate charge is 92nC at 10V.
The drain-source on-resistance is 14 mOhms at 30A and 10V.
The maximum operating temperature is 175°C.
The IRFU9010PBF is available in a D-Pak surface-mount package.