| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 620 | On Request | On Request |
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The IRFU48ZPBF is an N-Channel power MOSFET from Infineon's HEXFET family, designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 55V and a continuous drain current rating of 42A at 25°C (package limited), with a silicon-limited capability of 62A.
This device offers an ultra-low on-resistance of 11mΩ maximum at VGS=10V, enabling minimal conduction losses. It supports a wide operating junction temperature range from -55°C to 175°C, making it suitable for demanding thermal environments. The MOSFET is capable of handling pulsed drain currents up to 250A and single-pulse avalanche energy up to 74mJ.
The IRFU48ZPBF is housed in a through-hole IPAK (TO-251AA) package, which provides good thermal performance with a junction-to-case thermal resistance of 1.64°C/W. The device is lead-free and RoHS compliant.
The drain-source breakdown voltage is 55V.
42A at TC=25°C (package limited), 62A silicon limited.
Maximum 11mΩ at VGS=10V, ID=37A.
Through-hole IPAK (TO-251AA) package.
-55°C to 175°C junction temperature.