Mfr Part #:

IRFU4615PBF

N-Channel MOSFET with 150V drain-source voltage and 33A continuous drain current. Features low on-resistance of 42mΩ and is housed in an IPAK (TO-251AA) through-hole package.

✓ Total Stock: 4,020 pcs

IRFU4615PBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFU4615PBF Description

Short technical summary and product information.

The IRFU4615PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high efficiency power switching applications such as synchronous rectification in SMPS, uninterruptible power supplies, and high speed switching circuits.

Key electrical specifications include a maximum drain-source voltage of 150V, continuous drain current of 33A at 25°C (24A at 100°C), and a maximum on-resistance of 42mΩ at Vgs=10V. The gate threshold voltage is 5V maximum at 100µA. The device can handle pulsed drain currents up to 140A and has a single pulse avalanche energy rating of 109mJ.

The MOSFET is offered in a through-hole IPAK (TO-251AA) package with short leads. It has a maximum power dissipation of 144W at 25°C case temperature, with a linear derating factor of 0.96W/°C. The operating junction temperature range is -55°C to 175°C. Thermal resistance from junction to case is 1.045°C/W maximum.

The device is lead-free and RoHS compliant (unverified). It is suitable for hard switched and high frequency circuits. The standard package quantity is 75 units per tube/bulk. Alternate package variants include D-PAK (TO-252) versions.

IRFU4615PBF Quick Information

Product Type: N-Channel MOSFET

Series: HEXFET

Canonical Name: IRFU4615PBF N-Channel MOSFET, 150V, 33A, IPAK (TO-251AA)

Subcategory: Single MOSFET

IRFU4615PBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFU4615PBF Features

150V maximum drain-source voltage rating.
33A continuous drain current at 25°C.
Low on-resistance of 42mΩ maximum.
HEXFET technology for rugged performance.
Through-hole IPAK (TO-251AA) package.

IRFU4615PBF Applications

High efficiency synchronous rectification in SMPS.
Uninterruptible power supply (UPS) systems.
High speed power switching circuits.
Hard switched and high frequency circuits.

IRFU4615PBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

150V.

What is the continuous drain current?

33A at 25°C case temperature (24A at 100°C).

What is the on-resistance?

42mΩ maximum at Vgs=10V, Id=21A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is this MOSFET available in?

TO-251-3 Short Leads, IPak, TO-251AA (through-hole).

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

5V maximum at Id=100µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	33 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1750 pF @ 50 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	144 W
Rds On (Max) @ Id, Vgs	42mOhm @ 21A, 10V
Supplier Device Package	IPAK (TO-251AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	5 V @ 100 µA