| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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420 pcs
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420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU420 is a third-generation N-Channel power MOSFET designed for fast switching and rugged performance. It features a drain-source voltage rating of 500V, continuous drain current of 2.4A at 25°C case temperature (1.5A at 100°C), and a maximum drain-source on-resistance of 3 Ohm at 2.4A and 10V gate drive.
This device supports repetitive avalanche energy up to 4.2 mJ and single-pulse avalanche energy up to 400 mJ, making it suitable for applications requiring high energy handling. The gate charge is 19 nC typical, with gate-source charge of 3.3 nC and gate-drain charge of 13 nC.
The IRFU420 is offered in a through-hole TO-251AA package (IPak) with straight leads, designed for easy PCB mounting. Power dissipation is rated at 42W at case temperature 25°C and 2.5W when mounted on a PCB at ambient temperature. The operating junction temperature range is -55°C to 150°C.
500V.
2.4A at Tc=25°C; derated to 1.5A at Tc=100°C.
Maximum 3 Ohm at Id=1.4A, Vgs=10V.
Through-hole TO-251AA (IPak) with straight leads.
-55°C to 150°C (junction temperature).