| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFU3910PBF is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for power switching applications with a maximum drain-source voltage of 100V and continuous drain current of 16A. The device features a low on-resistance of 115 mOhm (max) at 10V gate drive. Gate charge is 44 nC and input capacitance is 640 pF, making it suitable for moderate frequency switching. The MOSFET is housed in a through-hole IPAK (TO-251AA) package with three short leads. It operates over a junction temperature range of -55°C to 175°C. The device is listed as RoHS3 compliant, though this is unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.72 | $1.72 |
| 75+ | $0.76 | $0.76 |
| 150+ | $0.68 | $0.68 |
| 525+ | $0.57 | $0.57 |
| 1,050+ | $0.52 | $0.52 |
| 2,025+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
It comes in a through-hole IPAK (TO-251AA) package.
The junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant, but this is unverified.
The continuous drain current is 16A at Tc.
The maximum on-resistance is 115 mOhm at 10A and 10V.
The maximum gate charge is 44 nC at 10V.