| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,060 pcs
|
1060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU3607PBF is a 75V N-Channel HEXFET power MOSFET from Infineon Technologies. It is designed for high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high speed power switching applications. The device features a low maximum on-resistance of 9.0mOhm at Vgs=10V, Id=46A, with a typical value of 7.34mOhm. The continuous drain current is rated at 56A when package-limited at Tc=25°C, with a silicon-limited rating of 80A. Pulsed drain current capability is 310A, and avalanche energy is rated at 120mJ single pulse.
The MOSFET offers a total gate charge of 56nC typical (84nC max) at Vgs=10V, enabling efficient high-frequency switching. Input capacitance is 3070pF maximum at Vds=50V. The device is specified for junction temperatures from -55°C to 175°C. Package thermal resistance junction-to-case is 1.045°C/W maximum, allowing 140W power dissipation at Tc=25°C.
Packaged in the IPAK (TO-251AA) through-hole package with short leads, the IRFU3607PBF is suitable for PCB mounting. The lead-free (PbF) suffix indicates RoHS3 compliance. The part is also available in a D-Pak (TO-252) surface-mount variant as the IRFR3607PBF.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.06 | $2.06 |
| 10+ | $1.31 | $1.31 |
| 75+ | $0.93 | $0.93 |
| 150+ | $0.83 | $0.83 |
| 525+ | $0.70 | $0.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
IPAK (TO-251AA) through-hole package with short leads.
-55°C to 175°C (junction temperature).
It is marked as RoHS3 compliant (PbF suffix), but this is unverified.
7.34mOhm typical, 9.0mOhm maximum at Id=46A.