| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
82,020 pcs
|
82020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFU3410PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converter applications.
Key electrical specifications include a maximum drain-source voltage of 100V, a continuous drain current of 31A at 25°C case temperature, and a low on-resistance of 39mΩ (maximum) at VGS = 10V. The device can handle pulsed drain currents up to 125A.
The MOSFET is offered in the IPAK (TO-251) package, suitable for through-hole mounting. It is lead-free (PbF) compliant.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 31A at TC=25°C with VGS=10V.
The maximum static drain-to-source on-resistance is 39mΩ at VGS=10V and ID=18A.
The gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V at VDS=VGS and ID=250µA.
The IRFU3410PBF is available in the IPAK (TO-251) package.