| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
403 pcs
|
403 pcs | On Request | 1 | On Request | On Request | 1051 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFU3303PBF is an N-Channel enhancement mode MOSFET from Infineon Technologies. It features a maximum drain-to-source voltage of 30 V and a continuous drain current of 33 A at 25°C case temperature. The device has a maximum on-resistance of 31 mΩ at Vgs = 10 V and Id = 18 A, with a gate threshold voltage of 4 V at Id = 250 µA. Gate charge is 29 nC at Vgs = 10 V, and input capacitance is 750 pF at Vds = 25 V. Power dissipation is rated at 57 W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a through-hole IPAK (TO-251AA) package, suitable for automated insertion. It is intended for low-voltage power switching applications such as DC-DC converters and load switches.
30 V.
33 A at 25°C case temperature.
-55°C to 150°C (junction temperature).
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
Yes, RoHS3 Compliant (unverified).
31 mΩ maximum at Vgs=10V and Id=18A.
4 V maximum at Id=250 µA.