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IRFU320 N-Channel power MOSFET with 400V drain-source voltage and 3.1A continuous drain current. Features 1.8 Ohm on-resistance at 10V gate drive and TO-251AA through-hole package.
Mfr Part #:

IRFU320

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
N-Channel power MOSFET with 400V drain-source voltage and 3.1A continuous drain current. Features 1.8 Ohm on-resistance at 10V gate drive and TO-251AA through-hole package.
✓ Total Stock: 20,000 pcs

IRFU320 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
20,000 pcs
On Request
20000 pcs On Request 1 On Request On Request 9547 On Request On Request
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IRFU320 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFU320 Description

Short technical summary and product information.

The IRFU320 is an N-Channel power MOSFET with a drain-source voltage rating of 400V and continuous drain current of 3.1A at 25°C case temperature. Maximum on-resistance is 1.8 Ohm at Vgs=10V, and total gate charge is 20nC at 10V. The device supports gate-source voltage up to ±20V.\n\nThe through-hole TO-251AA (IPAK) package allows power dissipation up to 42W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C. This device is designed for fast switching and ease of paralleling in power switching applications.\n\nAdditional electrical characteristics include input capacitance of 350pF at Vds=25V and maximum gate threshold voltage of 4V. Single pulse avalanche energy rating is 160mJ, and peak diode recovery dV/dt is 4.0 V/ns. The part is suitable for through-hole mounting with straight leads.

IRFU320 Quick Information

Product Type: N-Channel MOSFET
Series: IRFR320, IRFU320, SiHFR320, SiHFU320
Canonical Name: IRFU320 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

IRFU320 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFU320 Features

  • 400V drain-source voltage rating.
  • 3.1A continuous drain current.
  • 1.8 Ohm max on-resistance at 10V.
  • 20nC total gate charge at 10V.
  • TO-251AA through-hole IPAK package.

IRFU320 Applications

  • Suitable for high-voltage power switching circuits.
  • Used in through-hole mounting power applications.
  • Well-suited for DC-DC converters and inverters.

IRFU320 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFU320?

400V.

What package is the IRFU320 available in?

TO-251-3 Short Leads, IPak, TO-251AA (through-hole).

What is the operating temperature range of the IRFU320?

-55°C to 150°C (junction temperature).

What is the continuous drain current of the IRFU320?

3.1A at Tc=25°C.

What is the on-resistance of the IRFU320?

1.8 Ohm maximum at Vgs=10V, Id=1.9A.

What is the total gate charge of the IRFU320?

20nC maximum at Vgs=10V.

Is the IRFU320 RoHS compliant?

RoHS3 compliant according to existing database data, though this is unverified and low confidence.

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