| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,407 pcs
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2407 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Military Grade | |
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The IRFU310BTU is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for switching and amplification applications requiring high voltage capability. The device features a maximum drain-to-source voltage of 400V and a continuous drain current of 1.7A at case temperature. The on-resistance is 3.4 Ohm at 850mA and 10V gate drive.
This MOSFET is built with MOSFET (Metal Oxide) technology and offers a gate threshold voltage of 4V at 250µA. The input capacitance is 330pF at 25V, and the total gate charge is 10nC at 10V, making it suitable for moderate-speed switching applications. Maximum power dissipation is 2.5W at ambient temperature and 26W at case temperature.
The device is housed in a through-hole TO-251-3 (IPAK) package, which allows for easy mounting on printed circuit boards. The operating junction temperature range is -55°C to 150°C, ensuring reliable performance in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1,514+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V.
TO-251-3 Stub Leads, IPak (TO-251 IPAK).
-55°C to 150°C (junction temperature).
The part is listed as RoHS3 compliant, but this is unverified. Verification is recommended.
1.7A at case temperature.
3.4 Ohm at 850mA and 10V gate drive.
4V maximum at 250µA drain current.