| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,170 pcs
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1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU2405PBF is a seventh-generation HEXFET Power MOSFET from Infineon Technologies. It is an N-Channel MOSFET with a drain-to-source voltage rating of 55V and a continuous drain current of 56A at 25°C (40A at 100°C). The device features a low typical on-resistance of 11.8mΩ and a maximum of 16mΩ at VGS=10V, ID=34A. It is designed for fast switching and is fully avalanche rated with a single pulse avalanche energy of 130mJ. The MOSFET is suitable for a variety of power applications including DC-DC converters, motor control, and power management. It is packaged in a through-hole IPAK (TO-251AA) package, which allows for easy mounting on PCBs. The device is RoHS compliant and has a junction temperature range of -55°C to 175°C.
The drain-source voltage (Vdss) is 55V.
It comes in a through-hole IPAK (TO-251AA) package.
The junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant, but this is unverified.
2.0V to 4.0V at VDS=10V, ID=250µA.
Typical 11.8mΩ, maximum 16mΩ at VGS=10V, ID=34A.
130mJ.