| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,005 pcs
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5005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU214PBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged operation. It offers a maximum drain-to-source voltage of 250V and a continuous drain current of 2.2A at 25°C case temperature. The device features a low on-resistance of 2Ω maximum at Vgs = 10V and Id = 1.3A, ensuring efficient power handling.
This MOSFET is avalanche-rated with a single pulse avalanche energy of 190mJ and repetitive avalanche capability, making it suitable for demanding inductive load applications. It also includes a dynamic dV/dt rating for enhanced robustness in switching circuits. The gate charge is 8.2nC maximum at 10V, enabling fast switching transitions.
The IRFU214PBF is housed in a through-hole TO-251AA (IPak) package with straight leads, ideal for PCB mounting. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 25W at case temperature 25°C.
The maximum drain-source voltage (Vdss) is 250V.
The continuous drain current is 2.2A at Tc = 25°C and 1.4A at Tc = 100°C.
The maximum drain-source on-resistance is 2Ω at Id = 1.3A and Vgs = 10V.
The IRFU214PBF is available in a through-hole TO-251AA (IPak) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.