| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,695 pcs
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4695 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU210PBF is an N-Channel power MOSFET manufactured by Vishay. It is designed for switching applications requiring high voltage capability up to 200V and continuous drain current of 2.6A at 25°C case temperature. The device features a maximum on-resistance of 1.5Ω at Vgs=10V, ensuring efficient power handling.
Key electrical characteristics include a maximum gate threshold voltage of 4V, input capacitance of 140pF, and total gate charge of 8.2nC. The MOSFET is rated for repetitive avalanche energy of 2.5mJ and a peak diode recovery dV/dt of 5.0V/ns, indicating ruggedness for demanding operating conditions.
The device is housed in a TO-251-3 (IPak) package with through-hole mounting, suitable for PCB assembly where surface-mount packages are not preferred. Power dissipation is rated at 25W at Tc=25°C and 2.5W at Ta=25°C on a 1" square PCB. It operates over a junction temperature range of -55°C to 150°C.
The drain-to-source voltage rating is 200 V.
At Tc = 25°C, the continuous drain current is 2.6 A; at Tc = 100°C, it is 1.7 A.
The maximum on-resistance is 1.5 Ω at Vgs = 10 V and Id = 1.6 A.
The maximum gate threshold voltage is 4 V at a drain current of 250 µA.
-55°C to 150°C (TJ).
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
25 W at Tc = 25°C; 2.5 W at Ta = 25°C (PCB mount).