| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFU1N60A is an N-Channel power MOSFET from Vishay Dale designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 1.4A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 7Ω at Vgs=10V and Id=840mA, a gate threshold voltage of 4V, and a total gate charge of 14nC. The device is rated for a maximum power dissipation of 36W and can operate over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-251-3 (IPak) through-hole package, also known as TO-251AA, which allows for easy mounting on printed circuit boards. It is suitable for applications such as switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and power factor correction circuits.
The drain-source voltage rating is 600V.
The continuous drain current is 1.4A at Tc=25°C.
The maximum on-resistance is 7Ω at Id=840mA and Vgs=10V.
The junction operating temperature range is -55°C to 150°C.
It is available in a TO-251-3 (IPak) through-hole package, also known as TO-251AA.
It is listed as RoHS3 compliant, but this data is unverified.
The maximum gate threshold voltage is 4V at Id=250µA.