IRFU130ATU N-Channel Power MOSFET with 100V drain-source voltage, 13A continuous drain current, and 110mΩ maximum on-resistance. Packaged in TO-251-3 (I-PAK) through-hole.
Mfr Part #:

IRFU130ATU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET with 100V drain-source voltage, 13A continuous drain current, and 110mΩ maximum on-resistance. Packaged in TO-251-3 (I-PAK) through-hole.
✓ Total Stock: 13,309 pcs

IRFU130ATU Available from 1 distributor

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IRFU130ATU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFU130ATU Description

Short technical summary and product information.

The IRFU130ATU from onsemi is an N-Channel power MOSFET utilizing metal-oxide semiconductor technology. It is designed for power switching and amplification circuits that require efficient control of moderate voltages and currents. This through-hole device provides a compact solution for a range of power conversion and management applications.

 

The transistor is rated for a drain-to-source voltage of 100 V and can conduct a continuous drain current of 13 A at a case temperature of 25°C. Its maximum on-resistance is 110 mΩ when driven with a 10 V gate-source voltage and a 6.5 A drain current. The gate threshold voltage is specified at 4 V maximum, and the recommended gate drive voltage is 10 V. Maximum power dissipation reaches 41 W at a case temperature of 25°C.

 

This MOSFET offers a maximum gate charge of 36 nC and input capacitance of 790 pF, which supports straightforward gate drive design. The TO-251-3 package, also known as I-PAK, is designed for through-hole mounting. The junction operating temperature range spans -55°C to 150°C, covering a wide range of operating environments. The device is listed as RoHS3 compliant and has an MSL of 1 (unlimited).

IRFU130ATU Quick Information

Product Type: Power MOSFET
Canonical Name: Single N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRFU130ATU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFU130ATU Features

  • Rated for 100V drain-source voltage.
  • Supports 13A continuous drain current.
  • 110mΩ on-resistance at 10V gate drive.
  • Uses TO-251-3 I-PAK through-hole package.
  • Operating temperature from -55°C to 150°C.

IRFU130ATU Applications

  • Can be used in power switching circuits.
  • Suited for DC-DC converter topologies.
  • Applicable to motor drive power stages.
  • Works in load switching applications.

IRFU130ATU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IRFU130ATU?

The drain-to-source voltage rating is 100 V.

What package is the IRFU130ATU available in?

It is offered in a TO-251-3 through-hole package, also known as I-PAK.

What is the operating temperature range?

The junction operating temperature range is -55°C to +150°C.

Is the IRFU130ATU RoHS compliant?

The device is listed as RoHS3 compliant.

What is the maximum continuous drain current?

The continuous drain current rating is 13 A at a case temperature of 25°C.

What is the maximum on-resistance?

The maximum drain-source on-resistance is 110 mΩ at a gate-source voltage of 10 V and drain current of 6.5 A.

What is the recommended gate drive voltage?

The recommended gate drive voltage is 10 V, and the absolute maximum gate-source voltage is ±20 V.

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