| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,309 pcs
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13309 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU130ATU from onsemi is an N-Channel power MOSFET utilizing metal-oxide semiconductor technology. It is designed for power switching and amplification circuits that require efficient control of moderate voltages and currents. This through-hole device provides a compact solution for a range of power conversion and management applications.
The transistor is rated for a drain-to-source voltage of 100 V and can conduct a continuous drain current of 13 A at a case temperature of 25°C. Its maximum on-resistance is 110 mΩ when driven with a 10 V gate-source voltage and a 6.5 A drain current. The gate threshold voltage is specified at 4 V maximum, and the recommended gate drive voltage is 10 V. Maximum power dissipation reaches 41 W at a case temperature of 25°C.
This MOSFET offers a maximum gate charge of 36 nC and input capacitance of 790 pF, which supports straightforward gate drive design. The TO-251-3 package, also known as I-PAK, is designed for through-hole mounting. The junction operating temperature range spans -55°C to 150°C, covering a wide range of operating environments. The device is listed as RoHS3 compliant and has an MSL of 1 (unlimited).
The drain-to-source voltage rating is 100 V.
It is offered in a TO-251-3 through-hole package, also known as I-PAK.
The junction operating temperature range is -55°C to +150°C.
The device is listed as RoHS3 compliant.
The continuous drain current rating is 13 A at a case temperature of 25°C.
The maximum drain-source on-resistance is 110 mΩ at a gate-source voltage of 10 V and drain current of 6.5 A.
The recommended gate drive voltage is 10 V, and the absolute maximum gate-source voltage is ±20 V.