IRFU120PBF N-Channel power MOSFET from Vishay, rated 100V drain-source voltage and 7.7A continuous current, with 270mOhm on-resistance. Through-hole mount in TO-251AA package.
Mfr Part #:

IRFU120PBF

Available from 3 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET from Vishay, rated 100V drain-source voltage and 7.7A continuous current, with 270mOhm on-resistance. Through-hole mount in TO-251AA package.
✓ Total Stock: 92,695 pcs

IRFU120PBF Available from 3 distributors

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78,000 pcs
78000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
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13,695 pcs
13695 pcs On Request 1 On Request On Request On Request On Request On Request
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IRFU120PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFU120PBF Description

Short technical summary and product information.

The IRFU120PBF is an N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It features a maximum drain-source voltage of 100V and continuous drain current of 7.7A at 25°C (4.9A at 100°C). The device offers a low on-resistance of 270mOhm at 10V gate drive.

 

This MOSFET is suitable for a variety of power switching applications including DC-DC converters, motor control, and power supplies. It exhibits typical gate charge of 16nC total, with 4.4nC gate-source and 7.7nC gate-drain, enabling efficient switching at moderate frequencies.

 

Packaged in the TO-251AA (IPak) through-hole package, the IRFU120PBF is designed for straightforward PCB mounting. It also supports repetitive avalanche energy up to 4.2mJ and single pulse avalanche energy of 210mJ, indicating robust performance under inductive loads.

 

Operating temperature range is -55°C to 150°C, with maximum power dissipation of 42W at case temperature 25°C and 2.5W at ambient 25°C on PCB.

IRFU120PBF Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: IRFU120PBF - N-Channel Power MOSFET 100V 7.7A TO-251AA
Subcategory: N-Channel MOSFET

IRFU120PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFU120PBF Features

  • N-Channel power MOSFET rated for 100V drain-source voltage.
  • Continuous drain current of 7.7A at 25°C case temperature.
  • Low on-resistance of 270mOhm at 10V gate drive.
  • Through-hole TO-251AA (IPak) package for easy mounting.
  • Repetitive avalanche rated for robust inductive load switching.

IRFU120PBF Applications

  • Used in DC-DC converter circuits for power regulation.
  • Suitable for motor control and drive applications.
  • Ideal for power supply switching and load switching.
  • Applicable in battery management and protection circuits.

IRFU120PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFU120PBF?

The maximum drain-source voltage (Vdss) is 100 V.

What package is the IRFU120PBF available in?

The IRFU120PBF is available in a TO-251-3 Short Leads, IPak, TO-251AA package (through-hole mounting).

What is the operating temperature range of the IRFU120PBF?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the IRFU120PBF RoHS compliant?

The IRFU120PBF is listed as RoHS3 compliant, but this is unverified and low confidence.

What is the continuous drain current rating of the IRFU120PBF?

The continuous drain current is 7.7 A at Tc=25°C and 4.9 A at Tc=100°C.

What is the on-resistance of the IRFU120PBF?

The maximum on-resistance (Rds(on)) is 270 mOhm at Id=4.6A and Vgs=10V.

What is the gate charge of the IRFU120PBF?

The total gate charge (Qg) is 16 nC at Vgs=10V, with typical Qgs=4.4 nC and Qgd=7.7 nC.

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