| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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78,000 pcs
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78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
13,695 pcs
|
13695 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFU120PBF is an N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It features a maximum drain-source voltage of 100V and continuous drain current of 7.7A at 25°C (4.9A at 100°C). The device offers a low on-resistance of 270mOhm at 10V gate drive.
This MOSFET is suitable for a variety of power switching applications including DC-DC converters, motor control, and power supplies. It exhibits typical gate charge of 16nC total, with 4.4nC gate-source and 7.7nC gate-drain, enabling efficient switching at moderate frequencies.
Packaged in the TO-251AA (IPak) through-hole package, the IRFU120PBF is designed for straightforward PCB mounting. It also supports repetitive avalanche energy up to 4.2mJ and single pulse avalanche energy of 210mJ, indicating robust performance under inductive loads.
Operating temperature range is -55°C to 150°C, with maximum power dissipation of 42W at case temperature 25°C and 2.5W at ambient 25°C on PCB.
The maximum drain-source voltage (Vdss) is 100 V.
The IRFU120PBF is available in a TO-251-3 Short Leads, IPak, TO-251AA package (through-hole mounting).
The operating temperature range is -55°C to 150°C (junction temperature).
The IRFU120PBF is listed as RoHS3 compliant, but this is unverified and low confidence.
The continuous drain current is 7.7 A at Tc=25°C and 4.9 A at Tc=100°C.
The maximum on-resistance (Rds(on)) is 270 mOhm at Id=4.6A and Vgs=10V.
The total gate charge (Qg) is 16 nC at Vgs=10V, with typical Qgs=4.4 nC and Qgd=7.7 nC.