| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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448 pcs
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448 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFTS8342TRPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for efficient power management in space-constrained applications.
This device offers a drain-to-source breakdown voltage of 30V and a continuous drain current of 8.2A at 25°C. It features a low on-state resistance of 19 mOhm maximum at VGS = 10V, and 29 mOhm maximum at VGS = 4.5V, enabling high efficiency. The gate threshold voltage ranges from 1.35V to 2.35V, allowing logic-level drive.
The MOSFET is housed in a surface-mount SOT-23-6 package (also known as TSOP-6 or 6-TSOP), suitable for automated assembly. It is RoHS compliant and has an MSL rating of 1, indicating no moisture sensitivity restrictions. The operating junction temperature range is -55°C to 150°C.
The drain-to-source breakdown voltage (BVDSS) is 30 V.
The maximum continuous drain current is 8.2 A at TA = 25°C with VGS = 10V.
The typical on-resistance is 15 mOhm and the maximum is 19 mOhm at VGS = 10V and ID = 8.2A.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount SOT-23-6 package, also referred to as TSOP-6 or 6-TSOP.
Yes, it is RoHS3 compliant and contains no lead, no bromide, and no halogen.
The gate threshold voltage (VGS(th)) is 1.35 V minimum, 1.80 V typical, and 2.35 V maximum at VDS = VGS and ID = 25µA.