| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 930 | On Request | On Request |
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The IRFSL4020PBF is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, featuring a drain-source voltage rating of 200V and a continuous drain current of 18A at 25°C case temperature. The device has a typical on-resistance of 85 mΩ at 10V gate drive, enabling low conduction losses.
This MOSFET is optimized for Class-D audio amplifier applications, with low gate charge and internal gate resistance to improve efficiency and reduce distortion. It supports a maximum junction temperature of 175°C and offers repetitive avalanche capability for robust operation.
The device is available in a TO-262-3 package with long leads, suitable for through-hole mounting. It provides a maximum power dissipation of 100W at 25°C case temperature, making it suitable for moderate to high power applications.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 18A at Tc=25°C and 13A at Tc=100°C.
The typical on-resistance is 85 mΩ at 11A and 10V gate drive, with a maximum of 105 mΩ.
The junction operating temperature range is -55°C to 175°C, and the storage temperature range is also -55°C to 175°C.
The device is available in a TO-262-3 package with long leads (I²Pak, TO-262AA), and it is through-hole mountable.
The device is marked as RoHS3 compliant, but this status is unverified.