| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44 pcs
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44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFSL3306PBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 120A (package limited) at 25°C, with a silicon-limited current of 160A.
The device offers a typical on-resistance of 3.3 mΩ and a maximum of 4.2 mΩ at VGS=10V and ID=75A, enabling low conduction losses. It has a maximum gate charge of 120 nC and input capacitance of 4520 pF, supporting fast switching. The MOSFET is rated for a maximum power dissipation of 230W at case temperature 25°C and operates over a junction temperature range of -55°C to 175°C.
The IRFSL3306PBF is housed in a TO-262-3 long leads package (I²Pak, TO-262AA) with through-hole mounting. It is RoHS3 compliant, lead-free, and halogen-free. The device is suitable for high-speed power switching, synchronous rectification in SMPS, and uninterruptible power supplies.
60V.
120A at 25°C (package limited) and 160A (silicon limited).
3.3 mOhm typical, 4.2 mOhm maximum at VGS=10V, ID=75A.
-55°C to 175°C junction temperature.
TO-262-3 long leads (I²Pak, TO-262AA) through-hole.
Yes, RoHS3 compliant, lead-free, and halogen-free.
230W at case temperature 25°C.