| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,187 pcs
|
1187 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFSL3206PBF is an N-Channel enhancement mode power MOSFET from Infineon's HEXFET family, designed for high efficiency power switching applications. It is rated for a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 120A (package limited) at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 3.0mΩ at Vgs=10V and Id=75A, with a typical value of 2.4mΩ. The device features a maximum gate charge (Qg) of 170nC at Vgs=10V and an input capacitance (Ciss) of 6540pF at Vds=50V. The maximum power dissipation is 300W at Tc=25°C.
The IRFSL3206PBF is housed in a TO-262-3 (I2Pak) through-hole package, offering improved thermal performance. It is lead-free, RoHS compliant, and halogen-free. The device is suitable for high-speed switching circuits, synchronous rectification in SMPS, and uninterruptible power supplies.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 120A at Tc=25°C (package limited).
The typical on-resistance is 2.4mΩ at Vgs=10V and Id=75A, with a maximum of 3.0mΩ.
It comes in a TO-262-3 (I2Pak) through-hole package.
Yes, it is RoHS compliant, lead-free, and halogen-free.
The maximum power dissipation is 300W at Tc=25°C.
The operating junction temperature range is -55°C to 175°C.