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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain-source voltage | |
| Gate-to-Source Voltage | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Maximum power dissipation | |
| Mounting Type | |
| Operating Junction and Storage Temperature Range | |
| Pulsed Drain Current | |
| SVHC Present |
The Vishay Dale IRFSL3107PBF is a HEXFET Power MOSFET designed for high efficiency and ruggedness. It offers a maximum drain-source voltage of 75V and a low typical on-resistance of 2.5mOhm at 10V gate-source voltage.
This MOSFET is characterized by its improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. It is suitable for applications such as high efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
The device is available in a TO-262 package, suitable for through-hole mounting. It has a continuous drain current rating of up to 230A (silicon limited) at 25°C and a maximum power dissipation of 370W at 25°C.
The operating junction and storage temperature range is -55°C to +175°C. The junction-to-case thermal resistance is a maximum of 0.40°C/W, and the junction-to-ambient thermal resistance is 40°C/W when mounted on a PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 75V.
The typical on-resistance is 2.5mOhm at a gate-source voltage of 10V.
The continuous drain current is rated at 230A (silicon limited) at 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFSL3107PBF is available in a TO-262 package.
The RoHS status is RoHS3 Compliant.