| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,620 pcs
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13620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFSL11N50APBF is a third-generation N-Channel power MOSFET from Vishay, designed for high-voltage switching applications. It offers a drain-source voltage rating of 500V and a continuous drain current of 11A at 25°C case temperature, with a maximum on-resistance of 550mOhm at 10V gate drive. The device is avalanche-rated, supporting single-pulse avalanche energy up to 390mJ, making it suitable for rugged industrial environments.
This MOSFET features fast switching characteristics with a maximum gate charge of 51nC, enabling efficient high-frequency operation. The device is rated for a maximum power dissipation of 190W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The TO-262-3 package (I2PAK) provides through-hole mounting with long leads for secure PCB attachment.
Typical applications include switch-mode power supplies, power factor correction circuits, motor control, and other high-voltage power conversion systems. The device's repetitive avalanche rating and dynamic dV/dt capability enhance reliability in demanding switching environments. The lead-free (PbF) version ensures RoHS compliance for environmentally conscious designs.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 11A at Tc=25°C and 7A at Tc=100°C.
The maximum on-resistance is 550mOhm at Id=6.6A and Vgs=10V.
It is available in a TO-262-3 long leads, I2Pak, TO-262AA package with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 compliant and is lead-free (PbF), though this is unverified.