| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS9N60APBF is an N-Channel enhancement mode power MOSFET designed for high voltage switching applications. It features a drain-source breakdown voltage of 600V and a continuous drain current rating of 9.2A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.75Ω at 10V gate drive and 5.5A drain current.
With a low total gate charge of 49 nC and an input capacitance of 1400 pF, this MOSFET is optimized for efficient high-speed switching. It is suitable for switch mode power supplies (SMPS), uninterruptible power supplies, and high speed power switching circuits.
The device is housed in a D2PAK (TO-263) surface mount package with three leads and a tab for enhanced thermal management. Maximum power dissipation is 170W at 25°C case temperature, and it operates over a junction temperature range of -55°C to 150°C.
600 V.
9.2 A at 25 °C case temperature.
Maximum 0.75 Ohm at VGS = 10 V and ID = 5.5 A.
D2PAK (TO-263), surface mount, with three leads and a tab.
-55 °C to 150 °C junction temperature.
RoHS3 compliant per manufacturer (unverified).