IRFS9N60A N-Channel power MOSFET with 600V drain-source voltage and 9.2A continuous drain current. Surface mount D2PAK package.
Mfr Part #:

IRFS9N60A

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET with 600V drain-source voltage and 9.2A continuous drain current. Surface mount D2PAK package.
Total Stock: 8 pcs

IRFS9N60A Available from 1 distributor

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8 pcs
8 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IRFS9N60A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Maximum @ Tc=100 °C)
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Gate Charge Gate-to-Drain (Qgd)
Gate Charge Gate-to-Source (Qgs)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Single Pulse Avalanche Energy
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFS9N60A Description

Short technical summary and product information.

The IRFS9N60A is an N-Channel power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 9.2A at 25°C. The device offers a low on-resistance of 750 milliohms at 10V gate drive, ensuring efficient power conversion.

 

Key electrical characteristics include a total gate charge of 49 nC and an input capacitance of 1400 pF, which enable fast switching with reduced drive requirements. The MOSFET is rated for a maximum power dissipation of 170W and can operate over a junction temperature range of -55°C to 150°C. It also features a single-pulse avalanche energy rating of 290 mJ, providing robustness in inductive switching environments.

 

The IRFS9N60A is housed in a surface-mount D2PAK (TO-263) package, which offers excellent thermal performance and is suitable for automated assembly. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching circuits.

IRFS9N60A Quick Information

Product Type: Power MOSFET
Canonical Name: IRFS9N60A N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFS9N60A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFS9N60A Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rated at 9.2A.
  • Low on-resistance of 750 milliohms.
  • Surface mount D2PAK package.
  • Operating temperature range -55°C to 150°C.

IRFS9N60A Applications

  • Used in switch mode power supplies (SMPS).
  • Suitable for uninterruptible power supplies.
  • Ideal for high speed power switching.
  • Applicable in active clamped forward converters.

IRFS9N60A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IRFS9N60A?

The operating junction temperature range is -55°C to 150°C.

What package is the IRFS9N60A available in?

It is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package is D²PAK (TO-263).

Is the IRFS9N60A RoHS compliant?

Yes, it is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain-source voltage of the IRFS9N60A?

The maximum drain-source voltage is 600V.

What is the continuous drain current at 25°C?

The continuous drain current is 9.2A at Tc = 25°C.

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