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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Tape & Reel |
The Infineon IRFS7730TRLPBF is a high-performance N-channel Power MOSFET from the StrongIRFET™ family, built on HEXFET® technology. It is designed for demanding applications such as brushed and BLDC motor drives, battery-powered circuits, and DC/DC converters.
Key electrical specifications include a drain-to-source breakdown voltage (Vds) of 75V and a low typical on-resistance (Rds(on)) of 2.2mΩ at 100A and 25°C. The continuous drain current (Id) is rated up to 246A (silicon limited) at 25°C case temperature.
This MOSFET offers improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode capability. It is characterized by fully specified capacitance and avalanche SOA. The device operates within a junction temperature range of -55°C to +175°C.
The IRFS7730TRLPBF is supplied in a surface-mount D2Pak package, suitable for automated assembly processes. It is lead-free and RoHS compliant, meeting environmental standards for modern electronic designs.
The drain-to-source breakdown voltage is 75V.
The typical on-resistance is 2.2mΩ at 100A and 25°C.
The maximum continuous drain current is 246A at 25°C case temperature (silicon limited).
The IRFS7730TRLPBF is supplied in a D2Pak package.
The operating junction and storage temperature range is -55°C to +175°C.
Yes, the IRFS7730TRLPBF is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.