| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,820 pcs
|
29820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS7437TRLPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It is designed for high-current switching applications with a maximum drain-source voltage of 40V. The device offers a continuous drain current of 195A (package limited) and up to 250A silicon limited. On-resistance is typically 1.4mΩ with a maximum of 1.8mΩ at Vgs=10V and Id=100A. Gate charge is 225nC maximum at 10V, and input capacitance is 7330pF at 25V.
This MOSFET is suitable for a variety of applications including brushed and brushless DC motor drives, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectification, resonant mode power supplies, and DC/AC inverters. The device is built with HEXFET technology, offering improved gate, avalanche, and dynamic dV/dt ruggedness.
The IRFS7437TRLPBF is supplied in a D2PAK (TO-263AB) surface mount package, which is RoHS3 compliant, lead-free, and halogen-free. It is shipped in tape and reel packaging with 800 pieces per reel. Operating junction temperature ranges from -55°C to 175°C, making it suitable for demanding thermal environments.
40V.
D2PAK (TO-263AB) surface mount package.
-55°C to 175°C.
Yes, it is RoHS3 compliant per attribute, and lead-free and halogen-free are verified by the datasheet.
1.4mΩ typical, 1.8mΩ maximum at Id=100A, Vgs=10V.
195A (package limited) at Tc, or 250A (silicon limited).