IRFS7437TRLPBF N-Channel Power MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 195A continuous drain current (package limited). Features low on-resistance of 1.4mΩ typical and 1.8mΩ maximum at 10V gate drive.
Mfr Part #:

IRFS7437TRLPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 195A continuous drain current (package limited). Features low on-resistance of 1.4mΩ typical and 1.8mΩ maximum at 10V gate drive.
✓ Total Stock: 29,820 pcs

IRFS7437TRLPBF Available from 1 distributor

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IRFS7437TRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFS7437TRLPBF Description

Short technical summary and product information.

The IRFS7437TRLPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It is designed for high-current switching applications with a maximum drain-source voltage of 40V. The device offers a continuous drain current of 195A (package limited) and up to 250A silicon limited. On-resistance is typically 1.4mΩ with a maximum of 1.8mΩ at Vgs=10V and Id=100A. Gate charge is 225nC maximum at 10V, and input capacitance is 7330pF at 25V.

 

This MOSFET is suitable for a variety of applications including brushed and brushless DC motor drives, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectification, resonant mode power supplies, and DC/AC inverters. The device is built with HEXFET technology, offering improved gate, avalanche, and dynamic dV/dt ruggedness.

 

The IRFS7437TRLPBF is supplied in a D2PAK (TO-263AB) surface mount package, which is RoHS3 compliant, lead-free, and halogen-free. It is shipped in tape and reel packaging with 800 pieces per reel. Operating junction temperature ranges from -55°C to 175°C, making it suitable for demanding thermal environments.

IRFS7437TRLPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFS7437TRLPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFS7437TRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFS7437TRLPBF Features

  • N-Channel enhancement mode MOSFET with 40V drain-source voltage.
  • Low on-resistance of 1.4mΩ typical at 10V gate drive.
  • High continuous drain current up to 195A (package limited).
  • Surface mount D2PAK (TO-263AB) package for easy assembly.
  • RoHS3 compliant, lead-free, and halogen-free.

IRFS7437TRLPBF Applications

  • Brushed and BLDC motor drive applications.
  • Battery powered circuits and DC/DC converters.
  • Synchronous rectifier and OR-ing power switches.
  • Half-bridge and full-bridge topologies.
  • Resonant mode power supplies and DC/AC inverters.

IRFS7437TRLPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the IRFS7437TRLPBF?

40V.

What is the package type of the IRFS7437TRLPBF?

D2PAK (TO-263AB) surface mount package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRFS7437TRLPBF RoHS compliant?

Yes, it is RoHS3 compliant per attribute, and lead-free and halogen-free are verified by the datasheet.

What is the typical on-resistance at 10V gate drive?

1.4mΩ typical, 1.8mΩ maximum at Id=100A, Vgs=10V.

What is the maximum continuous drain current?

195A (package limited) at Tc, or 250A (silicon limited).

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