| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFS640A is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for switching applications requiring moderate voltage and current handling. The device offers a maximum drain-source voltage of 200V and a continuous drain current of 9.8A at case temperature. On-resistance is specified at 180mOhm maximum with a 10V gate drive at 4.9A drain current.
Key electrical characteristics include a gate charge of 58nC at 10V and input capacitance of 1500pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current. The device is capable of dissipating up to 43W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The IRFS640A is housed in a TO-220-3 Full Pack package (TO-220F) with through-hole mounting. This full-pack package provides electrical isolation between the mounting tab and the die, simplifying heatsink attachment. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
Typical applications include power supply circuits, DC-DC converters, motor control, and inverter systems where the voltage and current ratings are suitable. The moderate gate charge and capacitance make it appropriate for medium-frequency switching.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-220-3 Full Pack (TO-220F) through-hole package.
The part is listed as RoHS3 Compliant, but this status is unverified.
The maximum drain-source voltage is 200V.
The continuous drain current is 9.8A at case temperature.
The maximum on-resistance is 180mOhm at 4.9A drain current and 10V gate drive.
The maximum gate threshold voltage is 4V at 250µA drain current.