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IRFS640A IRFS640A is an N-Channel power MOSFET from On Semiconductor. It features 200V drain-source voltage, 9.8A continuous drain current, and 180mOhm Rds(on) at 10V gate drive.
Mfr Part #:

IRFS640A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
IRFS640A is an N-Channel power MOSFET from On Semiconductor. It features 200V drain-source voltage, 9.8A continuous drain current, and 180mOhm Rds(on) at 10V gate drive.
Total Stock: 3,000 pcs

IRFS640A Available from 1 distributor

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IRFS640A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFS640A Description

Short technical summary and product information.

The IRFS640A is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for switching applications requiring moderate voltage and current handling. The device offers a maximum drain-source voltage of 200V and a continuous drain current of 9.8A at case temperature. On-resistance is specified at 180mOhm maximum with a 10V gate drive at 4.9A drain current.

 

Key electrical characteristics include a gate charge of 58nC at 10V and input capacitance of 1500pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current. The device is capable of dissipating up to 43W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The IRFS640A is housed in a TO-220-3 Full Pack package (TO-220F) with through-hole mounting. This full-pack package provides electrical isolation between the mounting tab and the die, simplifying heatsink attachment. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

 

Typical applications include power supply circuits, DC-DC converters, motor control, and inverter systems where the voltage and current ratings are suitable. The moderate gate charge and capacitance make it appropriate for medium-frequency switching.

IRFS640A Quick Information

Product Type: Power MOSFET
Canonical Name: IRFS640A N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFS640A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFS640A Features

  • 200V maximum drain-source voltage.
  • 9.8A continuous drain current rating.
  • 180mOhm on-resistance at 10V gate drive.
  • Through-hole TO-220F full-pack package.
  • RoHS3 compliant and REACH unaffected.

IRFS640A Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for DC-DC converter designs.
  • Applicable in inverter and UPS systems.

IRFS640A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IRFS640A?

The operating junction temperature range is -55°C to 150°C.

What package does the IRFS640A come in?

It is available in a TO-220-3 Full Pack (TO-220F) through-hole package.

Is the IRFS640A RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain-source voltage of the IRFS640A?

The maximum drain-source voltage is 200V.

What is the continuous drain current rating of the IRFS640A?

The continuous drain current is 9.8A at case temperature.

What is the on-resistance of the IRFS640A?

The maximum on-resistance is 180mOhm at 4.9A drain current and 10V gate drive.

What is the gate threshold voltage of the IRFS640A?

The maximum gate threshold voltage is 4V at 250µA drain current.

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