| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS52N15DTRLP is an N-Channel power MOSFET from Infineon Technologies designed for high efficiency power switching applications. It features a maximum drain-to-source voltage of 150V and a continuous drain current rating of 51A at 25°C case temperature. The device offers a low on-resistance of 32mOhm maximum at 10V gate drive, minimizing conduction losses.
This MOSFET uses advanced HEXFET technology with a typical gate charge of 60nC and input capacitance of 2770pF, enabling fast switching performance. The device is characterized for avalanche operation with a minimum avalanche drain-source voltage of 200V. It is housed in a D2PAK (TO-263) surface mount package with a junction-to-case thermal resistance of 0.47°C/W, allowing up to 230W power dissipation at 25°C case temperature.
Typical applications include high frequency DC-DC converters and plasma display panels. The device operates over a junction temperature range of -55°C to 175°C and is rated for peak diode recovery dv/dt of 5.5V/ns.
The maximum drain-source voltage is 150V.
The continuous drain current is 51A at Tc=25°C.
The maximum drain-source on-resistance is 32mOhm at Id=36A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.
It is available in a D2PAK (TO-263-3, D2Pak, TO-263AB) surface mount package.