| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Infineon IRFS52N15DPBF is a HEXFET Power MOSFET featuring N-channel technology. It is designed for applications such as high-frequency DC-DC converters and Plasma Display Panels.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 150V and a minimum avalanche voltage of 200V. The continuous drain current is rated at 51A at 25°C and 36A at 100°C (VGS @ 10V). It boasts a low on-resistance (RDS(ON)) of 32 mΩ at 10V gate-source voltage, contributing to reduced switching losses.
This MOSFET is available in multiple package types, including TO-220AB, TO-262, and D2Pak. It operates over a temperature range of -55°C to +175°C. The device is lead-free and RoHS3 compliant.
Benefits highlighted include low gate-to-drain charge for reduced switching losses and fully characterized capacitance for simplified design. It also features fully characterized avalanche voltage and current.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 150V.
The IRFS52N15DPBF is available in TO-262, TO-220AB, and D2Pak packages.
The operating junction and storage temperature range is -55 to +175°C.
The typical on-resistance (RDS(on)) is 32 mΩ at VGS=10V.
The typical total gate charge (Qg) is 60 nC.
The maximum continuous drain current is 51A at TC=25°C with VGS=10V.
The maximum junction temperature is 175°C.