| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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739 pcs
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739 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS4620PBF is a HEXFET Power MOSFET manufactured by International Rectifier, a brand now part of Infineon Technologies. This component is designed for high-efficiency synchronous rectification in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits.
Key electrical specifications include a maximum drain-to-source breakdown voltage of 200V and a continuous drain current of 24A at 25°C. The typical on-resistance (RDS(on)) is 63.7mΩ, with a maximum of 77.5mΩ at VGS = 10V. The gate threshold voltage ranges from 3V to 5V.
This MOSFET is available in D2Pak and TO-262 packages, suitable for surface mount applications. It features enhanced body diode capability and ruggedness, making it suitable for hard-switched and high-frequency circuits. The operating junction and storage temperature range is -55°C to +175°C.
The IRFS4620PBF is lead-free and RoHS3 compliant, indicating its suitability for modern electronic designs prioritizing environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 200V.
The typical static drain-to-source on-resistance is 63.7mΩ.
The continuous drain current at 25°C is 24A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFS4620PBF is available in D2Pak and TO-262 package types.
The IRFS4620PBF is RoHS3 compliant.