| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS4610TRRPBF is a N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion and switching applications.
Key electrical specifications include a drain-to-source breakdown voltage of 100V, continuous drain current of 73A at 25°C (52A at 100°C), and a pulsed drain current of 290A. The typical on-resistance is 11mΩ (14mΩ maximum) at VGS=10V. The gate threshold voltage ranges from 2.0V to 4.0V. Total gate charge is 140nC at 10V. Input capacitance is 3550pF at VDS=50V.
Thermal characteristics include a maximum power dissipation of 190W at TC=25°C, junction-to-case thermal resistance of 0.77°C/W, and junction-to-ambient (PCB mounted) thermal resistance of 40°C/W. The device operates over a junction temperature range of -55°C to +175°C.
Packaged in a surface-mount D2PAK (TO-263-3) with lead-free construction, the IRFS4610TRRPBF is suitable for applications such as synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched circuits.
100V.
73A at TC=25°C, 52A at TC=100°C.
TO-263-3 (D²Pak, 2 Leads + Tab).
11 mΩ typical, 14 mΩ maximum at VGS=10V, ID=44A.
-55°C to 175°C.
140 nC maximum at VGS=10V.
Yes, RoHS3 compliant (data unverified).