| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,500 pcs
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8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS4310ZTRLPBF is an N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching and rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 120A at a case temperature of 25°C (package limited; silicon limit is 127A). Maximum pulsed drain current is 560A and maximum power dissipation at 25°C is 250W.
On-resistance is specified with a typical value of 4.8mΩ and a maximum of 6mΩ at a drain current of 75A and gate-to-source voltage of 10V. Gate threshold voltage is 4V maximum at 150µA, and maximum gate charge is 170nC at 10V. This combination supports hard-switched and high-frequency circuits, including synchronous rectification in switched-mode power supplies and uninterruptible power supplies.
The device is supplied in a surface-mount TO-263-3 (D²PAK) package with an operating junction temperature range of -55°C to 175°C. Junction-to-case thermal resistance is 0.6 °C/W. The part is lead-free and marked with a PbF suffix.
The maximum drain-to-source voltage is 100V.
Continuous drain current is 120A at TC=25°C (package limited), 90A at TC=100°C; the silicon limit is 127A.
Typical on-resistance is 4.8mΩ and maximum is 6mΩ at ID=75A and VGS=10V.
It is available in a surface-mount TO-263-3 (D²PAK, 2 leads + tab) package, equivalent to D2PAK.
Maximum gate charge is 170nC at VGS=10V.
The operating junction temperature range is -55°C to +175°C.
The device is listed as RoHS3 compliant and lead-free; lead-free status is confirmed by the datasheet, while RoHS verification is low confidence.