SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRFS4229PBF is a HEXFET Power MOSFET optimized for advanced process technology. It is designed for applications such as PDP sustain, energy recovery, and pass switch functions, offering low on-resistance and low EPULSE ratings to reduce power dissipation.
Key features include low gate charge (Qg) for fast response, high repetitive peak current capability, and short fall & rise times for efficient switching. The MOSFET is housed in a D2Pak package, providing robust thermal performance with an RthJC of 0.65°C/W. Its operating junction temperature is rated up to 175°C, ensuring reliability under demanding conditions. The repetitive avalanche capability further enhances its robustness.
This MOSFET utilizes advanced process technology to deliver low on-resistance and low gate charge, making it suitable for high-frequency switching applications. Its design prioritizes energy efficiency and reliable operation in power delivery systems.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating junction temperature for the IRFS4229PBF is 175°C.
The IRFS4229PBF MOSFET is supplied in a D2Pak package.
The thermal resistance (junction-to-case) for the D2Pak package is 0.65°C/W.
The RoHS status of the IRFS4229PBF is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRFS4229PBF is 1 Unlimited.
The REACH status for the IRFS4229PBF is REACH Unaffected.
