| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS4227TRLPBF is an N-Channel enhancement mode power MOSFET fabricated using Infineon's advanced process technology. It is designed for applications requiring high efficiency and fast switching. With a maximum drain-source voltage of 200V and continuous drain current of 62A at 25°C case temperature, it provides robust power handling. The typical on-resistance is 22 mOhm at 10V gate drive, with a maximum of 26 mOhm. Gate threshold voltage is typically 5V at 250µA. This device is available in a D2PAK (TO-263) surface mount package. It features a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 0.45°C/W, enabling efficient heat dissipation. Key parameters are optimized for applications such as PDP sustain and energy recovery circuits. The low gate charge (98 nC) and fast switching times make it suitable for high-frequency power conversion.
200 V.
62 A.
22 mOhm.
5 V at 250 µA drain current.
-40°C to 175°C (junction).
D2PAK (TO-263).
Yes, RoHS3 compliant (unverified).