| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS41N15DPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converter applications. The device features a drain-to-source voltage rating of 150V and a continuous drain current of 41A at 25°C case temperature, with a pulsed drain current capability of 164A. The maximum on-resistance is 45mΩ at a gate drive voltage of 10V and a drain current of 25A.
This MOSFET offers a maximum gate charge of 110nC at 10V and an input capacitance of 2520pF at 25V, which supports efficient switching performance. The gate threshold voltage is 5.5V maximum, and the gate-to-source voltage range is ±30V. The device is designed for surface-mount assembly in a TO-263-3 (D2PAK) package, with a junction-to-case thermal resistance of 0.75°C/W.
The operating junction temperature range is -55°C to 175°C, and the maximum power dissipation at 25°C ambient is 3.1W. The device is lead-free and intended for use in high-frequency DC-DC converters. The D2PAK package is suitable for surface-mount PCB designs, offering a compact footprint for power management circuits.
The maximum drain-to-source voltage is 150V.
The continuous drain current is 41A at a case temperature of 25°C.
The maximum on-resistance is 45mΩ at a drain current of 25A and a gate-to-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-263-3 (D2PAK) surface-mount package.
The maximum gate-to-source voltage is ±30V.
The maximum power dissipation is 3.1W at an ambient temperature of 25°C.